PART |
Description |
Maker |
IRKT41-04 IRKT41-10 IRKT41-14 IRKT41-12 IRKT41-06 |
Silicon Controlled Rectifier, 62.8 A, 400 V, SCR, TO-240AA Silicon Controlled Rectifier, 62.8 A, 1000 V, SCR, TO-240AA Silicon Controlled Rectifier, 62.8 A, 1400 V, SCR, TO-240AA Silicon Controlled Rectifier, 62.8 A, 1200 V, SCR, TO-240AA Silicon Controlled Rectifier, 62.8 A, 600 V, SCR, TO-240AA
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Vishay Semiconductors
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2N3651 2N3652 2N3650 2N3653 |
35A silicon controlled rectifier. Vrsom 300V. 35A silicon controlled rectifier. Vrsom 400V. 35A silicon controlled rectifier. Vrsom 150V. 35A silicon controlled rectifier. Vrsom 500V.
|
General Electric Solid State
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IRKL41-06 IRKL41-08 IRKL41-14 |
Silicon Controlled Rectifier, 62.8 A, 600 V, SCR, TO-240AA Silicon Controlled Rectifier, 62.8 A, 800 V, SCR, TO-240AA Silicon Controlled Rectifier, 62.8 A, 1400 V, SCR, TO-240AA
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Vishay Semiconductors
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NTE5558 NTE5550 NTE5552 NTE5554 |
Silicon controlled rectifier. Peak reverse blocking voltage Vrrm = 400V. Forward current 25A. Silicon Controlled Rectifiers Silicon controlled rectifier. Peak reverse blocking voltage Vrrm = 200V. Forward current 25A.
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NTE[NTE Electronics]
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2N5064RLRA 2N5064RLRM 2N5064RLRMG 2N5061RLRM 2N506 |
Thyristor .8A 100V Connector Housing; Series:MicroClasp; No. of Contacts:3; Gender:Female; Body Material:Nylon 6/6; No. of Rows:1; Pitch Spacing:0.079" RoHS Compliant: Yes 0.8 A, 100 V, SCR, TO-92 Sensitive Gate Silicon Controlled Rectifiers 0.8 A, 100 V, SCR, TO-92 Sensitive Gate Silicon Controlled Rectifiers 0.8 A, 60 V, SCR, TO-92 Silicon Controlled Rectifier .8A 25V Thyristor .8A 200V Thyristor .8A 50V
|
ONSEMI[ON Semiconductor]
|
CPA80A12AA4-12FC CPAT45A12AA4-12FC CPA250V2AA4-12F |
SILICON CONTROLLED SWITCH ADD-A-PAK 3 PHASE, 400 A, SILICON, RECTIFIER DIODE SCR 3 PHASE, 1000 A, SILICON, RECTIFIER DIODE
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SM12CXC220 SM34CXC614 SM36CXC604 SM38CXC624 SM38CX |
860 A, 1200 V, SILICON, RECTIFIER DIODE 1160 A, 3400 V, SILICON, RECTIFIER DIODE 1010 A, 3600 V, SILICON, RECTIFIER DIODE 1106 A, 3800 V, SILICON, RECTIFIER DIODE 2640 A, 3800 V, SILICON, RECTIFIER DIODE 1106 A, 3400 V, SILICON, RECTIFIER DIODE 435 A, 1500 V, SILICON, RECTIFIER DIODE 440 A, 600 V, SILICON, RECTIFIER DIODE 1160 A, 3800 V, SILICON, RECTIFIER DIODE 1160 A, 4200 V, SILICON, RECTIFIER DIODE 940 A, 800 V, SILICON, RECTIFIER DIODE 940 A, 1800 V, SILICON, RECTIFIER DIODE 940 A, 400 V, SILICON, RECTIFIER DIODE 940 A, 1000 V, SILICON, RECTIFIER DIODE 940 A, 600 V, SILICON, RECTIFIER DIODE 940 A, 1600 V, SILICON, RECTIFIER DIODE 1106 A, 4000 V, SILICON, RECTIFIER DIODE 310 A, 2600 V, SILICON, RECTIFIER DIODE 370 A, 2600 V, SILICON, RECTIFIER DIODE 2700 A, 2600 V, SILICON, RECTIFIER DIODE 860 A, 1400 V, SILICON, RECTIFIER DIODE 440 A, 400 V, SILICON, RECTIFIER DIODE 440 A, 800 V, SILICON, RECTIFIER DIODE 435 A, 1600 V, SILICON, RECTIFIER DIODE 435 A, 1800 V, SILICON, RECTIFIER DIODE 527 A, 3200 V, SILICON, RECTIFIER DIODE
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WESTCODE SEMICONDUCTORS LTD
|
BYV27-600 BYV27 BYV27-100 BYV27-150 BYV27-200 BYV2 |
Ultra fast low-loss controlled avalanche rectifiers 1.25 A, 300 V, SILICON, RECTIFIER DIODE 1/2" NPT Bracket; Style: Bracket; Applicable Model: LU7 / LHE-A 1.3 A, 100 V, SILICON, RECTIFIER DIODE From old datasheet system
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NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
|
MCK100-6 |
400V Vdrm 0.8A Sensitive Gate Silicon Controlled Rectifier, 1.7@1AV Peak On-State Voltage, 500V/μs Rise of Off-State Voltage Sensitive Gate Silicon Controlled Rectifiers
|
SemiWell Semiconductor
|
CS220-25N CS220-25B CS220-25D CS220-25M |
Leaded Thyristor SCR SILICON CONTROLLED RECTIFIER 25 AMP, 200 THRU 800 VOLTS 25 A, 200 V, SCR, TO-220AB SILICON CONTROLLED RECTIFIER 25 AMP, 200 THRU 800 VOLTS 25 A, 800 V, SCR, TO-220AB SILICON CONTROLLED RECTIFIER 25 AMP, 200 THRU 800 VOLTS 25 A, 600 V, SCR, TO-220AB
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CENTRAL[Central Semiconductor Corp] Central Semiconductor, Corp.
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15112GOA 15102GOA 15104GOA 15102GOAIL 15110GOA 151 |
Silicon Controlled Rectifier
|
Microsemi Corporation
|
08003GOD 08003GOB |
Silicon Controlled Rectifier
|
Microsemi
|
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